Samsung starts shipping HBM4 memory, HBM4E samples coming later this year

Samsung has started mass production of its HBM4 memory and has already shipped the first batches to customers. The chips are built on the company’s 6th‑generation 10nm‑class DRAM process, known as “1c”, paired with a 4nm logic base die to push higher performance.

HBM4 reaches speeds of 11.7Gbps per pin, about 46% faster than the current 8Gbps industry standard. With 2,048 pins, that adds up to roughly 3.3TB/s of bandwidth. Samsung also plans to sample a faster HBM4E variant to customers later this year.